3 edition of Semiconductor superlattices and interfaces found in the catalog.
Semiconductor superlattices and interfaces
International School of Physics "Enrico Fermi" (1991 Varenna, Italy)
|Other titles||Superreticoli e interfacce di semiconduttori.|
|Statement||edited by A. Stella and by L. Miglio.|
|Series||Proceedings of the International School of Physics "Enrico Fermi" ;, course 117|
|Contributions||Stella, A., Miglio, L., Società italiana di fisica.|
|LC Classifications||QC611.6.S9 I58 1991|
|The Physical Object|
|Pagination||xi, 473 p. :|
|Number of Pages||473|
|LC Control Number||93028288|
The research on Si-Ge superlattices has a) refuted the explanation of optical spectra, b) provided the first clear cut argument that shows the importance of defects and interface roughness in. Semiconductor materials, which are used to fabricate the superlattice structures, may be divided by the element groups, IV, III-V and II-VI. While group III-V semiconductors (especially GaAs/Al x Ga 1−x As) have been extensively studied, group IV heterostructures such as the Si x Ge 1−x system are much more difficult to realize because of the large lattice mismatch.
-Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices -Metastability in Semiconductor Strained-Layer Structures -The Morphology of MOCVD-Grown Semiconductor Multilayers -Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures -Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices . Summary: Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book offers an up .
Advanced technological devices often contain a high density of semiconductor interfaces. Phonon scattering at these interfaces impedes thermal transport through the device and can adversely affect performance and reliability. To improve device design, accurate phonon transport models are needed. Such models will also allow improvements in the design of semiconductor superlattices (periodic. of fabricating interfaces between two semiconductors to grow quantum wells (QWs) and superlattices with very high quality, one can never grow supedattices with the ideal structure. Here, an ideal superlattice means an array of two (or more) alternating layers of materials with a single peri.
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Semiconductor Superlattices and Interfaces is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth Semiconductor superlattices and interfaces book and applications.
Description. Semiconductor Superlattices and Interfaces is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications.
The papers deal with the interaction of theory, experiments and Book Edition: 1. Dynamical Phenomena at Surfaces, Interfaces and Superlattices Proceedings of an International Summer School at the Ettore Majorana Centre, Erice, Italy, July 1–13, Editors: Nizzoli, Fabrizio, Rieder, Karl-Heinz, Willis, Roy F.
(Eds.) Free Preview. About this book. About this book. This volume contains the proceedings of the International Winter School on "Heterostructures and Two-Dimensional Electronic Systems in Semiconductors". The school took place in Mauterndorf, Austria, from February 26 - March 2,and was the third one in a series of winter schools on "New Develop ments in Solid-State Physics", organized by the Austrian Physical.
The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor Edition: 1.
This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications.
Dynamical Phenomena at Surfaces, Interfaces and Superlattices Proceedings of an International Summer School at the Ettore Majorana Centre, Erice, Italy, July 1–13, Optical and Magnetic Aspects of ZnSe/MnSe Superlattices.
The preparation of semiconductor superlattices, in which layer thicknesses approach molecular monolayer limits, presents a situation where effects of heterointerfaces can become a key factor in determining the physical properties of such layered structures.
A so far unexploited possibility is to use magnetic phenomena as a complement to conventional electronic probes for obtaining interface-specfic.
Superlattices and Microstructures is a journal disseminating the science and technology of synthetic heterostructures, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties.
The journal hosts papers dealing with. CiteScore: ℹ CiteScore: CiteScore measures the average citations received per peer-reviewed document published in this title. CiteScore values are based on citation counts in a range of four years (e.g. ) to peer-reviewed documents (articles, reviews, conference papers, data papers and book chapters) published in the same four calendar years, divided by the number of.
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All Subjects ; Asian Studies. Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained InGaAs /Ti/Au as well as InAlGaAs /GaAs/Cr films. Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques.
Special attention is paid to the interfaces of the semiconductor/metal hybrid superlattice. Writing a book on Semiconductor Device Physics and Design is never complete and proba-bly never completely satisfying. The ﬁeld is vast and diverse and it is difﬁcult to decide what should be included in the book and what should not be.
Of course it is always a good idea for. Semiconductor Superlattices: Growth and Electronic Properties [Fernando Agullo-Rueda, Kenzo Fujiwara, Holger T Grahn, Alain Sibille] on *FREE* shipping on qualifying offers.
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. Deals with the field of semiconductor microstructures and interfaces.
Topics covered include fundamental properties of interfaces, superlattices, quantum wells. Superlattices formed by arrays of Pt or Au nanoparticles have been obtained by layer-by-layer deposition by using dithiols as cross-linkers.
The superlattices have been characterized by X-ray diffraction, photoelectron spectroscopy, and scanning tunneling microscopy. The core-level intensities of the metal and of the dithiol in the X-ray photoelectron spectra show the expected increase with. Semiconductor Superlattice Theory and Application Introduction Kai Ni Superlattice is a periodic structure of layers of two or more materials.
Typically the width of layers is orders of magnitude larger than the lattice constant, and is limited by the growth of the structure. As shown in the figure below, it is a superlattice formed by.
Oriented attachment, the process in which nanometer-sized crystals fuse by atomic bonding of specific crystal facets, is expected to be more difficult to control than nanocrystal self-assembly that is driven by entropic factors or weak van der Waals attractions.
Here, we present a study of oriented attachment of PbSe nanocrystals that counteract this tuition. The reaction was studied in a thin.
A Bird’s-Eye View on the Evolution of Semiconductor Superlattices and Quantum Wells. Leo Esaki. Theoretical study of band offsets at semiconductor interfaces. Chris G. Van de Walle, Richard M.
Martin. Pages About this book. Keywords. Phonons in Semiconductor Superlattices Ramon Shift (cmi) Figure 1. Raman spec- ef42 A GaAs-8 A Alo.3Guo.7A~ shows the calculated dispersion curve based on the ECM Eqn. (11) (after Ref. 10). which each layer is treated as an elastic continum characterised by density P and sound velocity v.
The dispersion relation for a periodic sequence of two layers with thickness d. A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability.
This book examines various aspects of interfaces, showing how. Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained In Ga As ∕ Ti ∕ Au as well as In Al Ga As ∕ Ga As ∕ Cr films.
Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques.This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April May 1, This course was the fourth one of the International School of Solid-State Device Research, which is .